dm j70h1d3sh3 document number: ds 3 8306 rev. 1 - 2 1 of 6 www.diodes.com november 2015 ? diodes in corporated dm j70h1d3sh3 new product n - channel enhancement mode mosfet product summary b v dss r ds(on) max i d t c = + 25 c 700 v 1. 3 ? @ v gs = 10v 4.6 a description and applications this mosfet is designed to minimize the on - state resistance (r ds(on) ) and yet maintain superior sw itching performance, making it ideal for high - efficiency power management applications. ? motor c ontrol ? backlighting ? a c - dc converters features and benefits ? low on - resistance ? high bvdss rating for power application ? low input capacitance ? lead - free finish ; rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) mechanical data ? case: to251 ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram ? terminals: finish C matte tin a nnealed over copper l eadframe. solderable per mil - std - 202, method 208 ? weight: 0. 33 grams ( a pproximate) to251 (uipak) o rdering information (note 4 ) part number case packaging dm j7 0h1d3s h 3 to251 75pieces / tube notes: 1 . eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.h tml for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http//www.diodes.com/products/packages.html . marking information to251 internal schematic t op view pin configuration 7n70sh yyww =manufacturer s marking 7n70sh = product type marking code yyww = date code marking yy or yy = last digit of year (ex: 1 5 = 201 5 ) ww o r ww = week code (01 to 53) to251 top view to251 bottom view e3
dm j70h1d3sh3 document number: ds 3 8306 rev. 1 - 2 2 of 6 www.diodes.com november 2015 ? diodes in corporated dm j70h1d3sh3 new product maximum ratings (@ t a = + 25c , unless otherwise spe cified .) characteristic symbol value units drain - source voltage v dss 700 v gate - source voltage v gss 30 v continuous drain current (note 5 ) v gs = 10 v t c = +25c t c = + 10 0c i d 4.6 2. 9 a maximum body diode forward current (note 6 ) i s 3.0 a pulsed drai n current ( 10 s pulse, duty cycle = 1% ) i dm 5.4 a avalanche current (note 7 ) l = 60mh i as 1. 1 a avalanche energy (note 7 ) l = 60mh e as 40 mj peak d iode r ecovery d v/ d t (note 7) dv/dt 5 v/ns thermal characteristics (@ t a = + 25c , unless otherwise sp ecified .) characteristic symbol value units total power dissipation (note 5 ) t c = +25c p d 41 w t c = + 10 0c 16 thermal resistance, junction to ambient (note 6 ) r ja 79 c/w thermal resistance, junction to case (note 5 ) r j c 3. 0 operating and stora ge temperature range t j, t stg - 55 to +150 c electrical characteristics (@ t a = + 25c , unless otherwise specified .) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 7 00 ? ? gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? ds = 7 00 v, v gs = 0v gate - source leakage i gss ? ? gs = 30 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) 2 2.9 4 v v ds = v gs , i d = 250 a static drain - source on - resistance r ds (on) ? ? gs = 10 v, i d = 2.5 a diode forward voltage v sd ? gs = 0v, i s = 5 a dynamic characteristics (note 7 ) input capacitance c iss ? ? ds = 50 v, f = 1mhz, v gs = 0 v output capacitance c oss ? ? rss ? ? g ? ? ? ? ? ds = 0 v, v gs = 0v , f = 1mhz total gate charge q g ? ? ? ? dd = 56 0 v, i d = 5 a, v gs = 10 v gate - source charge q gs ? ? gd ? ? d(on) ? ? dd = 350v, v gs = 1 0 v , r g = 4.7 ? d = 2.5 a turn - on rise time t r ? ? d(off) ? ? f ? ? ? ? rr ? ? s = 5 a , di /d t = 100a/ j = + 150 c ) t rr ? ? ? ? rr ? ? ? ? c body diode reverse recovery charge ( t j = + 150 c ) q rr ? ? ? ? c notes: 5 . device mounted on infinite heatsink . 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout . 7 . guaranteed by design. not subject to production testing . 8 . short duration pulse test used to minimize self - heating effect .
dm j70h1d3sh3 document number: ds 3 8306 rev. 1 - 2 3 of 6 www.diodes.com november 2015 ? diodes in corporated dm j70h1d3sh3 new product v , drain-source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 1 2 3 v = 3.5v gs 4 5 6 7 8 9 10 v = 4.0v gs v = 4.5v gs v = 5.0v gs v = 5.5v gs v = 25v gs v = 15v gs v = 10v gs v = 6.0v gs v = 8.0v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 1 2 3 4 5 0 1 2 3 4 5 6 7 8 9 10 v = 20v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 1 2 3 4 5 v = 10v gs v , gate-source voltage (v) gs figure 4 typical transfer characteristics r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 1 2 3 4 5 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 i = 2.5a d i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 1 2 3 4 5 0 1 2 3 4 5 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 10v gs t , junction temperature ( c) figure 6 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -50 -25 0 25 50 75 100 125 150 v = v i = 1a gs d 5.0 v = v i = 5a gs d 10
dm j70h1d3sh3 document number: ds 3 8306 rev. 1 - 2 4 of 6 www.diodes.com november 2015 ? diodes in corporated dm j70h1d3sh3 new product t , junction temperature ( c) figure 7 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 1 2 3 4 5 -50 -25 0 25 50 75 100 125 150 v = 5.0v i = 1a gs d v = v i = 5a gs d 10 t , junction temperature ( c) figure 8 gate threshold variation vs. ambient temperature j ? v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -50 -25 0 25 50 75 100 125 150 i = 1ma d i = 250a d v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s 0 1 2 3 4 5 0 0.3 0.6 0.9 1.2 1.5 t = 150c a t = 125c a t = 85c a t = -55c a t = 25c a v , drain-source voltage (v) ds figure 10 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 c iss c oss c rss f = 1mhz q (nc) g , total gate charge figure 11 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) g s 0 2 4 6 8 10 0 3 6 9 12 15 v = 560v i = a ds d 5 0.01 0.1 1 10 1 10 100 1000 - i , d r a i n c u r r e n t ( a ) d -v , drain-source voltage (v) ds figure 12 soa, safe operation area r ds(on) limited t = 150c j(max) t = 25c a v = 10v gs single pulse dut on infinite heatsink p = 100s w p = 1s w p = 10ms w p = 1ms w p = 100s w p = 10s w p = 1s w
dm j70h1d3sh3 document number: ds 3 8306 rev. 1 - 2 5 of 6 www.diodes.com november 2015 ? diodes in corporated dm j70h1d3sh3 new product package outline dimens ions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. to251 (type th3) dim min max typ a 2.20 2.40 2.30 a2 0.97 1.17 1.07 b 0.68 0.90 0.78 b2 0.76 0.95 0.84 b3 5.20 5.50 5.33 c 0.43 0.63 0.53 d 5.9 8 6.22 6.10 d1 5.30 ref d2 5.26 5.66 5.46 e 2.286 bsc e 6.40 6.80 6.60 e1 4.63 5.03 4.83 h 9.40 9.85 9.62 k 0.40ref l1 2.30 2.70 2.50 l3 0.88 1.28 1.02 l4 0.75 ref l5 1.65 1.95 1.80 1 5 9 7 2 5 9 7 all dimensions in mm 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t1, pulse duration times (sec) figure 13 transient thermal resistance r (t) = r(t) * r ? ? jc jc r = 3.3c/w ? jc duty cycle, d = t1/ t2 d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse d = 0.9 d l3 ?1.2x0.1 top e-mark e b3 b2 01 l4 a k 02 l5
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